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5SNA1200G450350 | ABB HiPak Insulated Gate Bipolar Transistor (IGBT) Module
Артикул: QT-40004
от 442 144 ₸
В наличии: 1
Предложения складов
| Склад | Цена | В тенге | Остаток | Доставка |
|---|---|---|---|---|
| склад-3 | 933,60 USD | 442 144 ₸ | 1 | 30–45 дней |
Характеристики
| Estimated Lead Time | Usually Ships in 3 - 5 Working Days |
|---|---|
| ID каталога | 43817 |
| Manufacturer | ABBUltra low-loss, rugged SPT+ chip-setSmooth switching SPT+ chip-set for good EMCIndustry standard packageHigh power densityAlSiC base-plate for high power cycling capabilityAlN substrate for low thermal resistanceImproved high reliability packageRecognized under UL1557, File E196689 |
| Model | HiPak Insulated Gate Bipolar Transistor (IGBT) Module |
| Part Number | 5SNA 1200G450350 |
| Shipping Weight | 1.5 Kg |
| Артикул | 5SNA1200G450350 |
Описание
Part Number: 5SNA 1200G450350Model: HiPak Insulated Gate Bipolar Transistor (IGBT) ModuleManufacturer: ABBUltra low-loss, rugged SPT+ chip-setSmooth switching SPT+ chip-set for good EMCIndustry standard packageHigh power densityAlSiC base-plate for high power cycling capabilityAlN substrate for low thermal resistanceImproved high reliability packageRecognized under UL1557, File E196689